Work

Pentacene thin film transistors using La2O3 as gate insulator

Year: 2010

Type: article

Source: Indian Journal of Physics

DOI: 10.1007/s12648-010-0045-8

Authors: R. Sarma, D. Saikia, K. Konwar, B. Baishya

Institution: Jagannath Barooah University

Language: English

Topic: Organic Electronics and Photovoltaics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978355144

FWCI: 0.245

Cites: 11

Cited by: 5

Related to: 10