Work

High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions

Year: 2015

Type: article

Abstract: Minimizing carrier recombination at cell contacts becomes increasingly important for reaching high efficiency. In this work, the passivated contact concept is implemented into n-type silicon solar cells with laser-processed local back surface fields. The passivation and contact characteristics of the SiO2/amorphous silicon (a-Si:H) stack on localized laser doped n+ regions are investigated. We find that the SiO2/a-Si:H stack provides not only good passivation to laser doped n+ regions but also allows a low contact resistivity after thermal annealing. With the implementation of the SiO2/a-Si:H passivated contact, an absolute efficiency gain of up to 1.5% is achieved for n-type solar cells.

Source: Applied Physics Letters

DOI: 10.1063/1.4915326

Authors: Xinbo Yang, James Bullock, Qunyu Bi, Klaus Weber

Institution: Australian National University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Funder: Australian Renewable Energy Agency