Formation of Amorphous Silicon by the Low-Temperature Tunneling Reaction of H Atoms with Solid Thin Film of SiH4 at 10 K
Year: 2001
Type: article
DOI: 10.1021/jp010553b
Authors: Kenzo Hiraoka, Tetsuya Sato, Shoji Sato, Shigeomi Hishiki, Katsunori Suzuki, Yukinori Takahashi, Tatsuya Yokoyama, Shinichi Kitagawa
Institution: University of Yamanashi
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1978504970