Work

Wavelength Tuning of GaAs/AlGaAs Quantum-Well Infrared Photodetectors by Thermal Interdiffusion

Year: 1999

Type: article

Abstract: Thermal interdiffusion is used to shift peak response wavelength of quantum well infrared photodetectors. A maximum 0.7 µm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red-shift is attributed to Si-dopant enhanced intermixing. Dark current is decreased about 5 times for 900°C annealed sample than as-grown one, which is attributed to Si-dopant out-diffusion. The experimentally observed reduction in the responsivity is attributed to out-diffusion of Si-dopant and degradation of interfaces.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.38.5044

Authors: Xingquan Liu, Ning Li, Xiaoshuang Chen, Wei Lu, Wenlan Xu, XianZhang Yuan, Na Li, S. C. Shen, Shu Yuan, Hark Hoe Tan, C. Jagadish

Institutions: Chinese Academy of Sciences, Shanghai Institute of Technical Physics

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1978900466

FWCI: 3.55

Cites: 14

Cited by: 22

Related to: 10