Work

Low temperature electrical transport properties of F-doped SnO2 films

Year: 2013

Type: article

Source: Solid State Communications

DOI: 10.1016/j.ssc.2012.12.024

Authors: K.H. Gao, T. Lin, X.D. Liu, X.H. Zhang, X.N. Li, J. Wu, Y.F. Liu, X.F. Wang, Y.W. Chen, B. Ni, N. Dai, J.H. Chu

Institutions: Tianjin University, East China Normal University, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, Hebei University of Technology, Shanghai Institute of Ceramics

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978987659

FWCI: 1.2

Cites: 36

Cited by: 16

Related to: 10