Work

Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors

Year: 2012

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2202632

Authors: I. Cortes, J. Roig, P. Moens, S. Mouhoubi, P. Gassot, J. Rebollo, F. Bauwens, D. Flores

Institutions: Centro Nacional de Microelectrónica, Institut de Microelectrònica de Barcelona, ON Semiconductor (Belgium)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1980214366

FWCI: 0.205

Cites: 9

Cited by: 3

Related to: 10