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Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths

Year: 2006

Type: article

Abstract: The role of nitrogen (N) in emission wavelengths from InAs quantum dots (QDs) was studied with intentional supplies of a N precursor (monomethylhydrazine) to InAs dot surfaces just before burying them with GaAs capping layers by metalorganic molecular-beam epitaxy. Luminescence from the InAs QDs showed a red shift with the N-precursor supplies on the dot surfaces, and more clear separations of the luminescence sub peaks originating from QD excited-state transitions were observed. The increase in the N precursor supplies on the dot surfaces however changed the relative variation in the emission wavelengths from the red shift to the blue shift. Additional observations of the dot sizes as well as the model calculations of the emission peaks and of the energy separations of the lowest and QD excited-state transitions showed that the red shift is due to the reduced Ga inclusion in the InAs QDs and that the blue shift is due to the reduced dot sizes.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.45.l529

Authors: Ikuo Suemune, Ganapathy Sasikala, Hidekazu Kumano, Katsuhiro Uesugi, Yoichi Nabetani, Takashi Matsumoto, J.-T. Maeng, Tae Yeon Seong

Institutions: Hokkaido University, Japan Science and Technology Agency, Research Institute for Electronic Science, Hokkaido University, University of Yamanashi, Gwangju Institute of Science and Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1980524554

FWCI: 0.187

Cites: 22

Cited by: 3

Related to: 10