Work

Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry

Year: 2004

Type: article

Source: Thin Solid Films

DOI: 10.1016/j.tsf.2004.01.009

Authors: P. Petrik, E.R. Shaaban, T. Lohner, G. Battistig, M. Fried, J. Garcia Lopez, Y. Morilla, O. Polgár, J. Gyulai

Institutions: Institute for Technical Physics and Materials Science, Al-Azhar University, Centro Nacional de Aceleradores

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Hungarian Science Foundation

OpenAlex ID: W1980855385

FWCI: 0.325

Cites: 11

Cited by: 8

Related to: 10