Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method
Year: 1990
Type: article
Abstract: For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high photosensitivity in the long-wavelength region. A new solid phase crystallization (SPC) method was developed to grow a Si crystal at temperatures as low as 600°C. Using this method, high-quality thin-film polycrystalline silicon (poly-Si) with a Hall mobility of 70 cm2/V·s was obtained. Quantum efficiency in the range of 800 nm ∼ 1000 nm was achieved up to 80% in an experimental solar cell using the n-type poly-Si with a grain size of about 1.5 µm. Therefore, it was found that our SPC method was suitable as a new technique to prepare high-quality solar cell materials.
DOI: 10.1143/jjap.29.2327
Institutions: Sanyo (Japan), Sanyo Electric (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1982259583