Improvement of carrier injection efficiency in a-SiC p-i-n LED using highly-conductive wide-gap p, n type a-SiC prepared by ECR CVD
Year: 1987
Type: article
Authors: Dusit Kruangam, Toshihiko Toyama, Yutaka Hattori, Masahiro Deguchi, Hiroaki Okamoto, Yoshihiro Hamakawa
Institution: The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1982908348