Work

Enhancement of Raman scattering intensity in porous silicon

Year: 1999

Type: article

Source: Physics of the Solid State

DOI: 10.1134/1.1130968

Authors: M. E. Kompan, I. I. Novak, V. B. Kulik, N. A. Kamakova

Institutions: Russian Academy of Sciences, Ioffe Institute, St Petersburg University

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1982971908

FWCI: 0.571

Cites: 9

Cited by: 10

Related to: 10