Work

Acceptor-bound exciton recombination dynamics in p-type GaN

Year: 1995

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.115225

Authors: M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun

Institution: Kansas State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1984012018

FWCI: 0.896

Cites: 1

Cited by: 24

Related to: 10