Work

Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K

Year: 2014

Type: article

Abstract: The temperature dependence of the contact resistivity ρ c (T) of Au-Ti-Al-Ti-n +-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range T = 4.2–300 K. It is shown that the saturation portion of ρ c (T) is observed in the low-temperature measurement region (4.2–50 K). As the temperature increases, ρ c decreases by the exponential law. The experimental and calculated dependences ρ c (T) are in agreement. The obtained results make it possible to conclude the field nature of the current transfer for the saturation region of ρ c (T) and the thermal-field one, for the exponential region.

Source: Semiconductors

DOI: 10.1134/s106378261410025x

Authors: A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, L. M. Kapitanchuk, V. N. Sheremet, Yu. N. Sveshnikov, A. S. Pilipchuk

Institutions: National Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics, Research Institute Orion, E.O. Paton Electric Welding Institute, Institute of Physics

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1985208667

FWCI: 0.225

Cites: 11

Cited by: 3

Related to: 10