Work

Photocurrent multiplication in a hydrogenated amorphous silicon-based p-i-n junction with an a-SiN:H layer

Year: 1992

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.351481

Authors: M. Yoshimi, T. Ishiko, K. Hattori, H. Okamoto, Y. Hamakawa

Institution: The University of Osaka

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985387773

FWCI: 1.854

Cites: 12

Cited by: 18

Related to: 10