Work

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation

Year: 2011

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/j.physb.2011.05.005

Authors: C. Nyamhere, A.G.M. Das, F.D. Auret, A. Chawanda, C.A. Pineda-Vargas, A. Venter

Institutions: Nelson Mandela University, IIE MSA, University of Pretoria, Cape Peninsula University of Technology, iThemba Laboratory

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985508356

FWCI: 0.125

Cites: 12

Cited by: 4

Related to: 10