Work

Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer

Year: 2013

Type: article

Source: Thin Solid Films

DOI: 10.1016/j.tsf.2013.06.007

Authors: Xiao Zou, Guojia Fang, Pingli Qin, Hongjiu Wang, Zengcai Song, Haoning Wang, Hao Long, Qing Wan

Institutions: Jianghan University, Wuhan University, Chinese Academy of Sciences, Ningbo Institute of Industrial Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985992916

FWCI: 0.196

Cites: 33

Cited by: 2

Related to: 10