Work

Infrared studies of transition layers at SiO2/Si interface

Year: 1998

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.368917

Authors: Haruhiko Ono, Taeko Ikarashi, Koichi Ando, Tomohisa Kitano

Institution: NEC (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1986010312

FWCI: 5.676

Cites: 28

Cited by: 53

Related to: 10