Year: 2006
Type: article
Abstract: UV-visible absorption and Raman scattering spectroscopy were used to investigate the effects of 4 MeV Xe-ion and 4 MeV Au-ion irradiations on α-SiC single crystals. The evolution of transmission spectra upon irradiation evidences an increase of the optical absorption. The optical band-gap energy decreases versus fluence, which is linked to band-gap closure attributed to the creation of localized states into the forbidden energy band. A strong effect of the irradiation temperature is observed as a result of dynamic annealing enhanced by the temperature increase. The Urbach energy increases versus fluence due to disorder accumulation in the damaged layer. Comparison of Urbach energy and disorder parameters extracted from Raman spectra shows that the Urbach energy is sensitive to the disorder induced by the accumulation of point defects.
Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Paris-Saclay, Centre National de la Recherche Scientifique, Institut de physique du globe de Paris, Institut de minéralogie, de physique des matériaux et de cosmochimie, Université Paris-Sud, Institut National de Physique Nucléaire et de Physique des Particules
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1986023907