Work

Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator

Year: 1992

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.107278

Authors: S. G. Hummel, Y. Zou, C. A. Beyler, P. Grodzinski, P. D. Dapkus, J. V. McManus, Y. Zhang, B. J. Skromme, W. I. Lee

Institutions: University of Southern California, Arizona State University, Varian Medical Systems (United States)

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1986211111

FWCI: 0.716

Cites: 10

Cited by: 6

Related to: 10