Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors
Year: 2009
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3151827
Authors: Gun Hee Kim, Byung Du Ahn, Hyun Soo Shin, Woong Hee Jeong, Hee Jin Kim, Hyun Jae Kim
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1986329993