Work

Valence band offset of ZnO∕GaAs heterojunction measured by x-ray photoelectron spectroscopy

Year: 2008

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2828860

Authors: P. F. Zhang, X. L. Liu, R. Q. Zhang, H. B. Fan, A. L. Yang, H. Y. Wei, P. Jin, S. Y. Yang, Q. S. Zhu, Z. G. Wang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1986809581

FWCI: 0.858

Cites: 27

Cited by: 25

Related to: 10