Year: 2005
Type: article
Abstract: The spin polarization of the electron current in a $p\text{\ensuremath{-}}(\mathrm{Ga},\mathrm{Mn})\mathrm{As}∕n\text{\ensuremath{-}}(\mathrm{Al},\mathrm{Ga})\mathrm{As}$ Zener tunnel diode, which is embedded in a light-emitting diode, is studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. In order to study the current spin effects the spin dependent tight-binding Hamiltonian is implemented into the Landauer-B\"uttiker scheme. This dual approach allows us to describe the experimentally observed high magnitude and strong bias dependence of the current spin polarization.
Source: Physical Review B
Authors: P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J. A. Majewski, T. Dietl
Language: Latvian
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1987136454