Limitation of Nitrogen Incorporation into the Hydrogenated Amorphous Carbon Nitride Films Formed from the Dissociative Excitation Reaction of CH3CN
Year: 2001
Type: article
Abstract: High-resolution CN(B2Σ+–X2Σ+) and CH(A2Δ–X2Π) emission spectra were observed for the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar for synthesizing hydrogenated amorphous carbon nitride (a-CN x :H) films. The simulation analysis of these spectra revealed that the relative number density of CH(A) to that of CN(B), N CH(A)/N CN(B), was strongly dependent on the pressure of Ar, P Ar, in the range of P Ar=0.1–0.8 Torr. The P Ar-dependence of N CH(A)/N CN(B) showed a strongly negative correlation with that of the [N]/([N]+[C]) ratio obtained in our previous structural analysis of the films [Saitoh et al.: Jpn. J. Appl. Phys. 39 (2000) 1258]. This correlation was fully explained in terms of the consumption of the CN radical by the hydrogen-abstraction reaction from the film surface, preventing the incorporation of the nitrogen atoms into the a-CN x :H films.
DOI: 10.1143/jjap.40.332
Institution: Nagaoka University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1987183256