Work

Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium

Year: 1997

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(96)00623-9

Authors: O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1987553804

FWCI: 1.905

Cites: 17

Cited by: 22

Related to: 10