Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕GaN heterostructure
Year: 2006
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2209178
Institution: National University of Singapore
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1987708296
