Work

GaN layer growth optimization for high power devices

Year: 2001

Type: article

Source: Materials Science and Engineering A

DOI: 10.1016/s0921-5093(00)01347-2

Authors: A. Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler, J. Salzman

Institution: Technion – Israel Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1987882007

FWCI: 0.753

Cites: 19

Cited by: 25

Related to: 10