Work

Mitigation of Low LER with PAG Bonded Resist for EUVL

Year: 2007

Type: article

Abstract: We developed and evaluated PAG bonded resist which is chemically amplified (CA) resist to reduce line edge roughness (LER) in extreme ultraviolet lithography (EUVL). Under electron beam (EB) exposure, it is compared that LER and resolution of photo acid generator (PAG) bonded resist and PAG blended resist which using same PAG and base polymer. It was found that LER and resolution of PAG bonded resist are better than that of PAG blended resist. LER of 3.5 nm in 75 nm L/S and resolution of 25 nm space were achieved. Under EUV exposure, sensitivity of 5.0 mJ/cm2 is achieved.

Source: Journal of Photopolymer Science and Technology

DOI: 10.2494/photopolymer.20.419

Authors: Yasuyuki Fukushima, Takeo Watanabe, Ryuji Ohnishi, Hiroo Kinoshita, Hideaki Shiotani, Shouta Suzuki, Masamichi Hayakawa, Yusuke Endo, Tomotaka Yamanaka, Shinichi Yusaa

Institutions: University of Hyogo, Hyogo University, TOYO Gosei Co., Ltd. (Japan)

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W1988487526

FWCI: 0.63

Cites: 5

Cited by: 10

Related to: 10