Work

Effects of grain boundaries on laser crystallized poly-Si MOSFET's

Year: 1981

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/edl.1981.25448

Authors: K.K. Ng, G.K. Celler, E.I. Povilonis, R.C. Frye, H.J. Leamy, S.M. Sze

Institution: AT&T (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1989178391

FWCI: 23.01

Cites: 8

Cited by: 76

Related to: 10