Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices
Year: 2001
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1427132
Authors: Kuei-Shu Chang-Liao, Ching-Sang Chuang
Institution: National Tsing Hua University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1989360696