Work

Elastic strain in InGaN and AlGaN layers

Year: 2000

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/s0921-5107(00)00371-8

Authors: M.F. Wu, Shude Yao, A. Vantomme, S. Hogg, G. Langouche, W. Van der Stricht, K. Jacobs, I. Moerman, J. Li, G.Y. Zhang

Institutions: Peking University, KU Leuven, Ghent University, IMEC

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fonds Wetenschappelijk Onderzoek, Vlaamse regering

Award: 沟道离子束合成法实现稀土硅化物的形成及其特性研究

OpenAlex ID: W1989664483

FWCI: 0.541

Cites: 16

Cited by: 13

Related to: 10