Work

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

Year: 2013

Type: article

Abstract: The Au/DyMnO₃/Nb:SrTiO₃/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO₃/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO₃/Nb:SrTiO₃ stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.

Source: Scientific Reports

DOI: 10.1038/srep02482

Authors: Z. B. Yan, J. -M. Liu

Institution: Nanjing University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,690

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Priority Academic Program Development of Jiangsu Higher Education Institutions