Work

Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers

Year: 2004

Type: article

Abstract: Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures (T⩾700°C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.

Source: Applied Physics Letters

DOI: 10.1063/1.1849855

Authors: J. M. J. Lopes, F. C. Zawislak, P. F. P. Fichtner, F. C. Lovey, A. M. Condó

Institutions: Universidade Federal do Rio Grande do Sul, Bariloche Atomic Centre

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1990357003

FWCI: 2.649

Cites: 6

Cited by: 29

Related to: 10