Work

In situ metrology advances in MOCVD growth of GaN-based materials

Year: 2004

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2004.08.080

Authors: M. Belousov, B. Volf, J.C. Ramer, E.A. Armour, A. Gurary

Institution: Veeco (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1991790787

FWCI: 0.407

Cites: 8

Cited by: 36

Related to: 10