Work

Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching

Year: 1991

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.104526

Authors: M. Notomi, M. Naganuma, T. Nishida, T. Tamamura, H. Iwamura, S. Nojima, M. Okamoto

Institution: NTT (Japan)

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1992175692

FWCI: 10.07

Cites: 11

Cited by: 91

Related to: 10