Work

Simulation of highvoltage power switching transistors under forced gain and inductive load turn-off conditions

Year: 1988

Type: article

Source: IEE Proceedings I Solid State and Electron Devices

DOI: 10.1049/ip-i-1.1988.0002

Authors: D.J. Roulston, J.-B. Quoirin

Institutions: University of Waterloo, Technicolor (France)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1992280892

FWCI:

Cites:

Cited by: 5

Related to: 10