Work

Aluminum selective area deposition on Si using diethylaluminumchloride

Year: 1989

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.101792

Authors: C. Sasaoka, K. Mori, Y. Kato, A. Usui

Institution: NEC (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1992872050

FWCI: 3.228

Cites: 6

Cited by: 32

Related to: 10