Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
Year: 2013
Type: article
Source: Solid-State Electronics
Authors: J. Schleeh, H. Rodilla, N. Wadefalk, P.Å. Nilsson, J. Grahn
Institution: Chalmers University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: VINNOVA
OpenAlex ID: W1993483384