Year: 2007
Type: article
Abstract: A high quality Mg x Zn 1− x O thin film with up to ∼40 at% Mg incorporation was grown on a quartz substrate by the rf magnetron sputtering technique. The photoconductive type of Mg 0.4 Zn 0.6 O metal–semiconductor–metal ultraviolet detector was prepared. The ratio of the ultraviolet to visible was more than four orders of magnitude; the 10%–90% rise and fall times were 16 ns and 250 ns, respectively. Furthermore, the dark current was below 40 nA under 3 V bias and the gain was observed which caused the high responsivity (∼1.3 A W −1 ) at 320 nm, and the corresponding detectivity D * was 1.37 × 10 11 cm Hz 1/2 W −1 . A high-speed response was attributed to the high quality of the Mg 0.4 Zn 0.6 O thin film, which was found to dramatically enhance the UV detection properties of the device. The effect of the gain on the fall time and responsivity was analysed in the present work.
Authors: D Y Jiang, J Y Zhang, K W Liu, Y M Zhao, C X Cong, Y M Lu, B Yao, Z Z Zhang, D Z Shen
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1993490945