Work

Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Year: 2004

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2004.05.039

Authors: Hyun Jin Kim, Hyunseok Na, Soon-Yong Kwon, Hui-Chan Seo, Hee Jin Kim, Yoori Shin, Keon-Hun Lee, Dong Hyuk Kim, Hye Jeong Oh, Sukho Yoon, Cheolsoo Sone, Yongjo Park, Euijoon Yoon

Institutions: Seoul National University, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1993596493

FWCI: 2.846

Cites: 13

Cited by: 30

Related to: 10