Work

Control of composition and deposition rate in Si-Ge CVD epitaxy on Si

Year: 1991

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(91)90723-i

Authors: Manabu Kato, Junichi Murota, Shoichi Ono

Institutions: Tohoku University, Research Institute of Electrical Communication, Tohoku University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994591939

FWCI: 1.854

Cites: 5

Cited by: 10

Related to: 10