Work

LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors

Year: 1991

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(91)90578-s

Authors: Yasuo Ashizawa, Takao Noda, Kouhei Morizuka, Masayuki Asaka, Masao Obara

Institution: Toshiba (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994640752

FWCI: 8.35

Cites: 14

Cited by: 54

Related to: 10