Work

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

Year: 2013

Type: conference-paper

Source: European Solid-State Device Research Conference

DOI: 10.1109/essderc.2013.6818819

Authors: D. Bisi, M. Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, C. Lanzieri, E. Zanoni, G. Meneghesso

Institutions: University of Padua, Leonardo (Italy)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994645274

FWCI: 2.139

Cites: 15

Cited by: 15

Related to: 10