Work

Hi-C isolation of DRAM storage capacitors

Year: 1982

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1982.190367

Authors: D.M. Erb, A. McCombs, M. Radwin

Institution: Advanced Micro Devices (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994648136

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Cites: 1

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Related to: 10