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A resurfed high-voltage NMOS device fully compatible with a low-voltage 0.8 μm BiCMOS technology

Year: 1996

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(95)00181-6

Authors: Yong Qiang Li, C.Andre T. Salama, Mike Seufert, Peter Schvan, Mike King

Institutions: University of Toronto, Nortel (Canada)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W1994799722

FWCI:

Cites: 5

Cited by:

Related to: 10