Work

Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

Year: 1989

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.101303

Authors: T. P. Humphreys, C. J. Miner, J. B. Posthill, K. Das, M. K. Summerville, R. J. Nemanich, C. A. Sukow, N. R. Parikh

Institutions: Nortel (Canada), Bell (Canada), RTI International, North Carolina State University, University of North Carolina at Chapel Hill

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994885872

FWCI: 1.821

Cites: 13

Cited by: 27

Related to: 10