Work

Design Considerations of Nanoscale Schottky Barrier Flash Memory with Source-Side Injection Programming

Year: 2011

Type: article

Abstract: This work numerically elucidates the considerations and optimizations of nanoscale Schottky barrier Flash cells with source-side injection programming. Due to the unique Schottky barrier junction and particular source-side injection programming, the considerations of device parameters in Schottky barriers Flash cells are dissimilar from those in traditional drain-side channel hot-electron cells. Dependences of design parameters, such as Schottky barrier height, tunnel-oxide thickness, substrate concentration, junction depth, and channel length, on the source-side injection programming are clarified to optimize nanoscale Schottky barrier Flash memory. A feasible design of 50 nm Schottky barrier cell is illustrated to have high injection efficiency at low programming voltage.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.50.024202

Authors: Chun-Hsing Shih, Yan-Xiang Luo, Sheng Pin Yeh

Institutions: National Chi Nan University, National Tsing Hua University, National Ilan University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1994895084

FWCI: 0.224

Cites: 17

Cited by: 3

Related to: 10