Work

Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs

Year: 2013

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201200657

Authors: Natalia Shmidt, Andrew Greshnov, Anton Chernyakov, Michael Levinshtein, Alexander Zakgeim, Evgeniia Shabunina

Institution: Ioffe Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994913640

FWCI: 0.877

Cites:

Cited by: 10

Related to: 10