Effect of nitrogen on band alignment in HfSiON gate dielectrics
Year: 2005
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2135390
Authors: S. Sayan, N. V. Nguyen, J. Ehrstein, J. J. Chambers, M. R. Visokay, M. A. Quevedo-Lopez, L. Colombo, D. Yoder, I. Levin, D. A. Fischer, M. Paunescu, O. Celik, E. Garfunkel
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1995036089