Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
Year: 2012
Type: article
Abstract: A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed.
Source: Applied Physics Letters
DOI: 10.1063/1.4729154
Institutions: Georgia Tech-Europe, Centre National de la Recherche Scientifique, Georgia Institute of Technology, Georgia Tech-CNRS Laboratory, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Lille Nord de France, Supélec, Laboratoire Matériaux, Optique, Photonique et Systèmes, Université Paul Verlaine - Metz, III V Lab
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1995079718