Year: 2011
Type: article
Abstract: A single phase of MnSb2Se4 was synthesized by combining high‐purity elements at 773 K. Single‐crystal X‐ray diffraction revealed that MnSb2Se4 is isostructural with FeSb2Se4 crystallizing in the monoclinic space group C2/m with a = 13.076(3) Å, b = 3.965(2) Å, c = 15.236(4) Å, β = 115.1(2)°, Z = 4. MnSb2Se4 melts congruently at 790 K and is thermally stable up to 1000 K. Electronic band structure calculations, infrared diffuse reflectance spectroscopy, and low‐temperature electronic transport data indicate that MnSb2Se4 is a narrow‐bandgap p‐type semiconductor with an energy bandgap of approximately 0.31 eV and exhibits a sharp increase in the resistivity near 230 K. A large Seebeck coefficient (S = +945 μV K–1), high electrical resistivity (ρ ≈ 9 Ω m), and low thermal conductivity (κ = 1.4 W m–1 K–1) were observed at 300 K. Direct current (DC) magnetic‐susceptibility measurements indicated that MnSb2Se4 is paramagnetic at 300 K and undergoes an order/disorder antiferromagnetic transition with a Néel temperature of approximately 20 K. Alternating current (AC) susceptibility at various frequencies suggested a spin‐glass‐like behavior.
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1995278283